| PART |
Description |
Maker |
| XTSC0201-10NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0402-47NF-30V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0402-1NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| MPXV5050VC6T1 |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| BYP25A1 BYP25K05 BYP25A05 BYP25A2 BYP25A3 BYP25A4 |
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 300 V, SILICON, RECTIFIER DIODE
VGA VIDEO CABLE 100 FT MM 25 A, 100 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 600 V, SILICON, RECTIFIER DIODE
Silicon Press-Fit-Diodes High-temperature diodes 25 A, 400 V, SILICON, RECTIFIER DIODE
|
Diotec Semiconductor AG
Diotec Elektronische
|
| KTY81/121 KTY81/150 |
Silicon temperature sensors
KTY81-1 series; Silicon temperature sensors
|
Philips
|
| BZG03_3 BZG03-C20T/R BZG03-C91/T3 BZG03-C91T/R BZG |
36 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 240 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 24 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Voltage regulator diodes 47 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
51 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 22 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 51 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
22 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
220 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 220 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
10 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 180 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
Voltage regulator diodes 110 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
PWM, Step-Down DC-to-DC Controller with Margining and Tracking; Package: QSOP; No of Pins: 24; Temperature Range: Industrial 120 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
PWM, Step-Down DC-to-DC Controller with Margining and Tracking; Package: None Available; No of Pins: 24; Temperature Range: Industrial 12 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
11 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
16 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 18 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
15 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
12 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 15 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
1 Amp Synchronous, Step-Down DC-to-DC Converter; Package: LFCSP (4x4x.85mm, 2.10mm exposed pad); No of Pins: 16; Temperature Range: Industrial 75 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
75 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
Micropower Step Up/Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 27 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
27 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
270 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
91 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC PLASTIC PACKAGE-2
From old datasheet system
|
NXP Semiconductors N.V.
|
| CD6274CA CD6275 CD6302CA 1.5KCD6.8C CD6272CA CD628 |
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: LFCSP (5x5x.85mm) w/2.7exposed pad; No of Pins: 32; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 16 - Channel ±15 V/12 V iCMOS™ Multiplexer; Package: TSSOP (4.4mm); No of Pins: 28; Temperature Range: TBD 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
0.5 Ω CMOS 1.65 V TO 3.6 V 4-Channel Multiplexer; Package: MSOP; No of Pins: 10; Temperature Range: Automotive 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CELLULAR DIE PACKAGE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
480 MHz, Single Supply, Triple 2:1, Buffered (G= 2) Multiplexer; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
16-Channel Multiplexer (Superior DG506A Replacement); Package: PLCC; No of Pins: 28; Temperature Range: Commercial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
5 Ω Max Ron, 4 - /8 - Channel ±15 V /12 V /± 5 V Multiplexers; Package: LFCSP (4x4mm, 2.50mm exposed pad); No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
CMOS Low Voltage, 3 O 4-Channel Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
0.28 O CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 Open for a Logic 1 Input; Package: SC70; No of Pins: 6; Temperature Range: Industrial 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: Commercial 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 8-Channel, ±15 V/ 12 V iCMOS® Multiplexer; Package: LFCSP (4x4x.85mm, 2.10mm exposed pad); No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
Low Capacitance, 4-Channel, ±15 V/ 12 V iCMOS™ Multiplexer; Package: TSSOP; No of Pins: 16; Temperature Range: TBD 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
4 Channel Buffered, 250 MHz, 10 ns Switching Multiplexer w/Amplifier; Package: SOIC; No of Pins: 14; Temperature Range: Industrial
|
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| SD275SCU100B |
SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200∑C Operating Temperature 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
|
